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482ST89E 参数 Datasheet PDF下载

482ST89E图片预览
型号: 482ST89E
PDF下载: 下载PDF文件 查看货源
内容描述: 的SiGe HBT增益模块放大器MMIC , DC - 5 GHz的 [SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz]
分类和应用: 放大器
文件页数/大小: 6 页 / 238 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC482ST89
/
482ST89E
v04.0710
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 5 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/
DC ground.
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
6V
9.1 Ω
1/4 W
8V
27 Ω
1/2 W
10V
47 Ω
1W
12V
62 Ω
1.5 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5000
6.8 nH
100 pF
8 - 144
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com