HMC462LP5
/
462LP5E
v04.1010
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Psat vs. Temperature
20
7
AMPLIFIERS - LOW NOISE - SMT
P1dB vs. Temperature
20
17
P1dB (dBm)
Psat (dBm)
17
14
14
+25C
+85C
-40C
11
+25C
+85C
-40C
11
8
8
5
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
5
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
GAIN (dB), P1dB (dBm), Noise Figure (dB)
22
20
18
16
14
12
10
8
6
4
2
0
4.5
5
Vdd (V)
Gain
P1dB
Noise Figure
Idd
72
70
68
66
64
62
60
58
56
54
52
50
5.5
Idd (mA)
27
IP3 (dBm)
24
21
+25C
+85C
-40C
18
15
0
2
4
6
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+9 Vdc
+18 dBm
150 °C
3.25 W
52 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.5
+8.0
+8.5
Idd (mA)
66
67
68
71
72
73
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7-3
HITTITE [ HITTITE MICROWAVE CORPORATION ]
