HMC462LP5
/
462LP5E
v04.1010
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5V @ 66mA
50 Ohm Matched Input/Output
25 mm
2
Leadless SMT Package
7
AMPLIFIERS - LOW NOISE - SMT
Typical Applications
The HMC462LP5 / HMC462LP5E Wideband LNA is
ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C I
3
• Test Instrumentation
• Fiber Optics
Functional Diagram
General Description
The HMC462LP5 & HMC462LP5E are GaAs MMIC
pHEMT Low Noise Distributed Amplifiers in leadless
5x5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplifier
provides 13 dB of gain, 2.5 to 3.5 dB noise figure and
+14.5 dBm of output power at 1 dB gain compression
while requiring only 66 mA from a single +5V supply.
Gain flatness is excellent from 6 - 18 GHz making
the HMC462LP5 & HMC462LP5E ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms and are internally DC blocked.
Electrical Specifications,
T
A
= +25° C, Vdd= 5V
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V)
12
12
Min.
Typ.
2-6
14
±0.5
0.015
3.0
15
12
15
17
26
66
85
11
0.025
4.0
11
Max.
Min.
Typ.
6 - 14
13
±0.5
0.02
2.5
13
12
14
16
25
66
85
9
0.03
4.0
10
Max.
Min.
Typ.
14 - 20
12
±0.5
0.03
4.0
11
8
12
15
22
66
85
0.04
6.0
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
