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408LP3E 参数 Datasheet PDF下载

408LP3E图片预览
型号: 408LP3E
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓的InGaP HBT MMIC 1瓦的功放, 5.1 - 5.9 GHz的 [GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz]
分类和应用: 功率放大器
文件页数/大小: 8 页 / 352 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC408LP3
/
408LP3E
v03.0705
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power control pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended.
For lower idle current, this voltage can be reduced.
2, 4, 5 - 8, 12,
13, 15
N/C
No Connection
3
RFIN
This pin AC coupled and matched to 50 Ohms from
5.1 - 5.9 GHz.
9, 10, 11
RFOUT
RF output and DC bias for the output stage.
14
Vcc2
Power supply voltage for the second amplifier stage. Exter-
nal bypass capacitors and pull up choke are required as
shown in the application schematic.
16
Vcc1
Power supply voltage for the first amplifier stage. External
bypass capacitors are required as shown in the application
schematic.
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path.
Vias under the device are required.
GND
5 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com