HMC375LP3
/
375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+10 dBm
150 °C
1.015 W
64.1 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
135
136
137
7
AMPLIFIERS - LOW NOISE - SMT
7 - 77
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC375LP3
HMC375LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
375
XXXX
375
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
