HMC358MS8G
/
358MS8GE
v04.0607
MMIC VCO w/ BUFFER
AMPLIFIER, 5.8 - 6.8 GHz
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier
for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios
Features
Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm
2
MSOP8G SMT Package
Functional Diagram
General Description
The HMC358MS8G & HMC358MS8GE are GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
VCOs. The HMC358MS8G & HMC358MS8GE inte-
grate resonators, negative resistance devices, varac-
tor diodes, and buffer amplifiers. The VCO’s phase
noise performance is excellent over temperature,
shock, and process due to the oscillator’s monolithic
structure. Power output is 11 dBm typical from a 3.0V
supply voltage. The voltage controlled oscillator is
packaged in a low cost, surface mount 8 lead MSOP
package with an exposed base for improved RF and
thermal performance.
10
VCO
S
& PLOs - SMT
Electrical Specifications,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc)
Tune Port Leakage Current (Vtune= 10V)
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +3V
Frequency Drift Rate
9
-10
-20
10
150
0.8
0
100
10
8
Min.
Typ.
5.8 - 6.8
11
-110
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dB
dB
MHz pp
MHz/V
MHz/°C
10 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HITTITE [ HITTITE MICROWAVE CORPORATION ]
