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311LP3E 参数 Datasheet PDF下载

311LP3E图片预览
型号: 311LP3E
PDF下载: 下载PDF文件 查看货源
内容描述: 的InGaP HBT增益模块放大器MMIC , DC - 6 GHz的 [InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz]
分类和应用: 放大器
文件页数/大小: 6 页 / 227 K
品牌: HITTITE [ HITTITE MICROWAVE CORPORATION ]
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HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
8
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 2, 4 - 9,
11 - 16
Function
N/C
Description
This pin may be connected to RF ground.
Interface Schematic
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
10
RFOUT
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
8 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com