HMC311LP3
/
311LP3E
v03.0907
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vs = +5 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+7 Vdc
+10 dBm
150 °C
0.339 W
192 °C/W
-65 to +150 °C
-40 to +85 °C
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC311LP3
HMC311LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
311
XXXX
311
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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DRIVER & GAIN BLOCK AMPLIFIERS - SMT