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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Example of Emulation of Real-Time Flash-Memory Update  
H'0000  
Overlapped RAM  
H'007F  
H'0080  
H'00FF  
H'0100  
Small-block  
area (SB1)  
Flash memory  
address space  
H'7FFF  
H'FB80  
Overlapped  
RAM  
H'FC80  
H'FCFF  
On-chip  
RAM area  
H'FF7F  
Procedure  
1. Overlap part of RAM (H'FC80 to H'FCFF) onto the area requiring real-time update (SB1).  
(Set WSCR bits 7 and 6 to 01.)  
2. Perform real-time updates in the overlapping RAM.  
3. After finalization of the update data, clear the RAM overlap (by clearing the RAMS and  
RAM0 bits).  
4. Read the data written in RAM addresses H'FC80 to H'FCFF out externally, then program  
the flash memory area, using this data as part of the program data.  
Figure 19.12 Example of RAM Overlap  
416  
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