欢迎访问ic37.com |
会员登录 免费注册
发布采购

HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
 浏览型号HD6473434F16的Datasheet PDF文件第440页浏览型号HD6473434F16的Datasheet PDF文件第441页浏览型号HD6473434F16的Datasheet PDF文件第442页浏览型号HD6473434F16的Datasheet PDF文件第443页浏览型号HD6473434F16的Datasheet PDF文件第445页浏览型号HD6473434F16的Datasheet PDF文件第446页浏览型号HD6473434F16的Datasheet PDF文件第447页浏览型号HD6473434F16的Datasheet PDF文件第448页  
19.5  
Flash Memory Emulation by RAM  
Erasing and programming flash memory takes time, which can make it difficult to tune parameters  
and other data in real time. If necessary, real-time updates of flash memory can be emulated by  
overlapping the small-block flash-memory area with part of the RAM (H'FC00 to H'FD7F). This  
RAM reassignment is performed using bits 7 and 6 of the wait-state control register (WSCR).  
After a flash memory area has been overlapped by RAM, the RAM area can be accessed from two  
address areas: the overlapped flash memory area, and the original RAM area (H'FC00 to H'FD7F).  
Table 19.11 indicates how to reassign RAM.  
Wait-State Control Register (WSCR)*2  
Bit  
7
RAMS  
0
6
RAM0  
0
5
CKDBL  
0
4
3
WMS1  
1
2
WMS0  
0
1
WC1  
0
0
WC0  
0
Initial value*1  
Read/Write  
0
R/W  
R/W  
R/W  
R/W  
R/W  
R/W  
R/W  
R/W  
Notes: *1 WSCR is initialized by a reset and in hardware standby mode. It is not initialized in  
software standby mode.  
*2For details of WSCR settings, see section 19.2.4, Wait-State Control Register (WSCR  
Table 19.11 RAM Area Selection  
Bit 7: RAMS  
Bit 6: RAMO  
RAM Area  
ROM Area  
0
0
1
0
1
None  
H'FC80 to H'FCFF  
H'FC80 to H'FD7F  
H'FC00 to H'FC7F  
H'0080 to H'00FF  
H'0080 to H'017F  
H'0000 to H'007F  
1
415  
 复制成功!