2SK2933
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS 60
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10VNote4
ID = 8A, VGS = 4VNote4
ID = 8A, VDS = 10VNote4
VDS = 10V
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
IDSS
—
—
1.5
—
—
7
—
10
µA
µA
V
IGSS
—
±10
2.5
VGS(off)
RDS(on)
RDS(on)
|yfs|
—
0.040 0.052
0.060 0.105
Ω
Ω
Forward transfer admittance
Input capacitance
11
—
—
—
—
—
—
—
—
—
—
S
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
500
260
110
10
pF
pF
pF
ns
ns
ns
ns
V
Output capacitance
Reverse transfer capacitance
Turn-on delay time
VGS = 0
f = 1MHz
VGS = 10V, ID = 8A
RL = 3.75Ω
Rise time
80
Turn-off delay time
td(off)
tf
100
110
0.9
50
Fall time
Body–drain diode forward voltage VDF
IF = 15A, VGS = 0
Body–drain diode reverse
recovery time
trr
ns
IF = 15A, VGS = 0
diF/ dt =50A/µs
Note: 4. Pulse test
3
HITACHI [ HITACHI SEMICONDUCTOR ]
