2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Rating
Item
Symbol
VCBO
VCEO
VEBO
IC
2SD1163
2SD1163A
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
300
350
120
150
V
6
6
V
7
7
A
Collector peak current
Collector surge current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
IC (peak)
IC (surge)
PC*1
Tj
10
10
A
20
20
A
40
40
W
°C
°C
150
150
Tstg
–55 to +150
–55 to +150
Electrical Characteristics (Ta = 25°C)
2SD1163
2SD1163A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector cutoff current ICBO
—
—
—
—
5
—
—
—
—
—
5
mA
mA
V
VCB = 300 V, IE = 0
VCB = 350 V, IE = 0
IC = 10 mA, RBE = ∞
—
—
—
—
Collector to emitter
breakdown voltage
V(BR)CEO
V(BR)EBO
120
150
—
Emitter to base
6
—
—
6
—
—
V
IE = 10 mA, IC = 0
breakdown voltage
DC current transfer ratio hFE
25
—
—
—
—
25
—
—
—
—
VCE = 5 V, IC = 5 A*1
IC = 5 A, IB = 0.5 A*1
Collector to emitter
saturation voltage
VCE (sat)
VBE (sat)
tf
2.0
1.0
V
Base to emitter
—
—
—
—
1.2
0.5
—
—
—
—
1.2
0.5
V
IC = 5 A, IB = 0.5 A*1
saturation voltage
Fall time
µs
ICP = 3.5 A,
I
B1 = 0.45 A
Note: 1. Pulse test.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
