2SB791(K)
Typical Output Characteristics
–10
T
C
= 25°C
10000
DC current transfer ratio h
FE
P
C
5W
=2
–5.0
–4.5
–4.0
–3.5
–3.0
–2.5
–2.0
DC Current Transfer Ratio vs.
Collector Current
Collector current I
C
(A)
–8
3000
–6
–4
–1.5
–1.0
°
C
75
=
°
C
T
C
25
°
C
5
–2
1000
V
CE
= –3 V
300
–0.5 mA
–2
I
B
= 0
0
–1
–2
–3
–4
–5
Collector to emitter voltage V
CE
(V)
100
–0.1
–0.3
–1.0
–3
–10
Collector current I
C
(A)
Saturation Voltage vs.
Collector Current
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter sauration voltage V
BE(sat)
(V)
–10
–5
T
C
= 25°C
500
V
BE(sat)
I
C
/I
B
= 500
200
Switching time t (µs)
I
C
/I
B
= 200
10
3
1.0
0.3
0.1
0.03
0.01
–0.1
Switching Time vs. Collector Current
–2
–1.0
–0.5
t
stg
t
f
t
on
V
CE(sat)
–0.2
–0.1
–0.1 –0.2
V
CC
= –30V
I
C
= 500 I
B1
= –500 I
B2
Ta = 25°C
–3
–0.3
–1.0
Collector current I
C
(A)
–10
–0.5 –1.0 –2
–5
Collector current I
C
(A)
–10
3
HITACHI [ HITACHI SEMICONDUCTOR ]
