2SB791(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
0.5
1.6
1.5
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
—
—
—
V
V
V
V
µs
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –50 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= I
B2
= –8 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
1. Pulse test
h
FE
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
V
BE(sat)(2)
t
on
t
stg
t
f
Maximum Collector Dissipation
Curve
60
Collector power dissipation P
C
(W)
–30
i
C(peak)
–10
Area of Safe Operation
1
µs
10
µ
PW
Collector current I
C
(A)
40
–3
–1.0
–0.3
–0.1
DC
I
Cmax
(Continuous)
Op
s
1m
=1
er
s
at
0m
s
=2
io
n
(T
C
20
5
°
C
Ta = 25°C
1 Shot Pulse
)
0
50
100
Case temperature T
C
(°C)
150
–0.03
–1
–3
–10 –30 –100 –300 –1,000
Collector to emitter voltage V
CE
(V)
2
HITACHI [ HITACHI SEMICONDUCTOR ]
