2SB562
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
Tstg
Ratings
–25
–20
–5
–1.0
–1.5
0.9
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Note:
B
85 to 170
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
*
1
V
CE(sat)
V
BE
f
T
Cob
Min
–25
–20
–5
—
85
—
—
—
—
Typ
—
—
—
—
—
–0.2
–0.8
350
38
Max
—
—
—
–1.0
240
–0.5
–1.0
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
I
C
= –0.8 A,
I
B
= –0.08 A (Pulse test)
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
V
CE
= –2 V,
I
C
= –0.5 A (Pulse test)
V
CB
= –10 V, I
E
= 0
f = 1 MHz
1. The 2SB562 is grouped by h
FE
as follows.
C
120 to 240
2
HITACHI [ HITACHI SEMICONDUCTOR ]
