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2SB1409L 参数 Datasheet PDF下载

2SB1409L图片预览
型号: 2SB1409L
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 7 页 / 38 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1409(L)/(S)
Maximum Collector Dissipation Curve
30
Collector power dissipation Pc (W)
–10
–3
–1.0
–0.3
–0.1
PW =
i
C (peak)
I
C (max)
DC
Op
Area of Safe Operation
10 ms
20
Collector Current I
C
(A)
er
ati
s
1m
10
0
50
100
Case Temperature T
C
(°C)
150
–0.03 Ta = 25°C
1 Shot Pulse
–0.01
–3
–10
–30
–100
–300
Collector to emitter Voltage V
CE
(V)
°
C
25
)
Typical Output Characteristics
–1.0
1,000
P
C
= 18 W
DC current transfer ratio h
FE
DC Current Transfer Ratio vs.
Collector Current
on
(T
C
=
Collector Current I
C
(A)
–0.8
–0.6
–5
5
–4.
–4
–3.5
–3
300
–2.5
–2
–1.5
–1 mA
100
–0.4
–0.2
I
B
= 0
0
T
C
= 25°C
30
V
CE
= –5 V
Ta = 25°C
–0.03
–0.1
–0.3
Collector current I
C
(A)
–1.0
–10
–20
–30
–40
–50
Collector to emitter Voltage V
CE
(V)
10
–0.01
3