2SB1409(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
Ratings
–180
–160
–5
–1.5
–3
18
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
–180
–160
–5
—
60
30
—
—
—
—
Typ
—
—
—
—
—
—
—
—
240
25
Max
—
—
—
–10
200
—
–1
–1.5
—
—
V
V
MHz
pF
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V, I
C
= –150 mA*
2
V
CE
= –5 V, I
C
= –500 mA*
2
I
C
= –500 mA, I
B
= –50 mA
V
CE
= –5 V, I
C
= –150 mA
V
CE
= –5 V, I
C
= –150 mA
V
CB
= –10 A, I
E
= 0, f = 1 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
V
CE(sat)
V
BE
f
T
Cob
Notes: 1. The 2SB1409(L)/(S) is grouped by h
FE1
as follows.
B
60 to 120
C
100 to 200
2. Pulse test.
2
HITACHI [ HITACHI SEMICONDUCTOR ]
