2SB1027
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–180
–120
–5
–1.5
–3
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE1
*
1
h
FE2
Collector to emitter saturation
voltage
Base to emitter voltage
Note:
Mark
h
FE1
V
CE(sat)
V
BE
Min
–180
–120
–5
—
60
30
—
—
Typ
—
—
—
—
—
—
—
—
Max
—
—
—
–10
320
—
–1.0
–0.9
V
V
Unit
V
V
V
µA
Test conditions
I
C
= –1 mA, I
E
= 0
I
C
= –10 mA, R
BE
=
∞
I
E
= –1 mA, I
C
= 0
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V, I
C
= –0.15 A,
pulse
V
CE
= –5 V, I
C
= –0.5 A,
pulse
I
C
= –0.5 A, I
B
= –50 mA,
Pulse
V
CE
= –5 V, I
C
= –0.15 A,
pulse
1. The 2SB1027 is grouped by h
FE1
as follows.
EH
60 to 120
EJ
100 to 200
EK
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
