欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1002CJTL 参数 Datasheet PDF下载

2SB1002CJTL图片预览
型号: 2SB1002CJTL
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, UPAK-3]
分类和应用:
文件页数/大小: 6 页 / 34 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
 浏览型号2SB1002CJTL的Datasheet PDF文件第1页浏览型号2SB1002CJTL的Datasheet PDF文件第3页浏览型号2SB1002CJTL的Datasheet PDF文件第4页浏览型号2SB1002CJTL的Datasheet PDF文件第5页浏览型号2SB1002CJTL的Datasheet PDF文件第6页  
2SB1002
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–70
–50
–6
–1
–1.5
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
10 ms, Duty cycle
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
f
T
Cob
Min
–70
–50
–6
100
Typ
150
35
Max
–0.1
–0.1
320
–0.6
–1.2
V
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
I
E
= –10
µA,
I
C
= 0
V
CB
= –50 V, I
E
= 0
V
EB
= –4 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
V
CE
= –2 V,
I
C
= –10 mA (Pulse test)
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
1. The 2SB1002 is grouped by h
FE
as follows.
CH
100 to 200
CJ
160 to 320
2