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2SB1001 参数 Datasheet PDF下载

2SB1001图片预览
型号: 2SB1001
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 6 页 / 34 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SB1001
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Saturation Voltage
V
CE (sat)
(V)
Base to Emitter Saturation Voltage
V
BE (sat)
(V)
10,000
DC Current Transfer Ratio h
FE
3,000
1,000
300
100
–25
30
10
–1
–3.0
–1.0
–0.3
–0.1
V
CE (sat)
–0.03
–0.01
–0.003
–3
I
C
= 10 I
B
Pulse
V
BE (sat)
Saturation Voltage vs. Collector Current
V
CE
= –2 V
Pulse
25
Ta = 75°C
–3
–10 –30 –100 –300 –1,000
Collector Current I
C
(mA)
–10 –30 –100 –300 –1,000–3,000
Collector Current I
C
(mA)
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance C
ob
(pF)
1,000
f = 1 MHz
I
E
= 0
300
100
30
10
–0.1
–0.3
–1.0
–3
–10
Collector to Base Voltage V
CB
(V)
4