2SB1001
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
–20
–16
–6
–2
–3
1
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Mark
h
FE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
f
T
Cob
Min
–20
–16
–6
—
—
100
—
—
—
—
Typ
—
—
—
—
—
—
–0.15
–1.0
150
50
Max
—
—
—
–0.1
–0.1
320
–0.3
–1.2
—
—
V
V
MHz
pF
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –16 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –2 V,
I
C
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
I
C
= –1 A,
I
B
= –0.1 A (Pulse test)
V
CE
= –2 V,
I
C
= –10 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
1. The 2SB1001 is grouped by h
FE
as follows.
BH
100 to 200
BJ
160 to 320
2
HITACHI [ HITACHI SEMICONDUCTOR ]
