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2SA1191 参数 Datasheet PDF下载

2SA1191图片预览
型号: 2SA1191
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用:
文件页数/大小: 10 页 / 47 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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2SA1190, 2SA1191
DC Current Transfer Ratio vs.
Collector Current
Collector to emitter saturation voltage
V
CE (sat)
(V)
1,000
Ta = 75°C
DC current transfer ratio h
FE
300
–25
–1.0
I
C
= 10 I
B
Pulse
–0.3
Collector to Emitter Saturation Voltage vs.
Collector Current
25
100
–0.1
Ta = 75°C
–25
30
V
CE
= –12 V
Pulse
10
–1
–3
–10
–30
Collector Current I
C
(mA)
–100
–0.03
25
–0.01
–1
–3
–10
–30
Collector Current I
C
(mA)
–100
Base to Emitter Saturation Voltage vs.
Collector Current
–10
Base to emitter saturation voltage
V
BE (sat)
(V)
Gain bandwidth product f
T
(MHz)
I
C
= 10 I
B
Pulse
–3
25
1,000
Gain Bandwidth Product vs.
Collector Current
V
CE
= –6 V
500
200
100
50
–1.0
Ta = –25°C
75
–0.3
20
10
–0.5 –1.0 –2
–5 –10 –20
Collector Current I
C
(mA)
–0.1
–1
–3
–10
–30
Collector Current I
C
(mA)
–100
–50
6