2SA1190, 2SA1191
Collector Cutoff Current vs.
Collector to Base Voltage
–10.000
Collector cutoff current I
CBO
(pA)
I
E
= 0
–1,000
Ta = 75°C
25
–25
–10
Collector cutoff current I
CEO
(nA)
–1,000
R
BE
=
∞
–100
Ta = 75°C
25
–10
–25
–1.0
Collector Cutoff Current vs.
Collector to Emitter Voltage
–100
–1
0
–20
–40
–60
–80
–100
Collector to Base Voltage V
CB
(V)
–0.1
0
–20
–40
–60
–80
–100
Collector to Emitter Voltage V
CE
(V)
Emitter Cutoff Current vs.
Emitter to Base Voltage
I
C
= 0
Ta = 75°C
–100
Collector to emitter breakdown voltage
V
(BR) CER
(V)
–1,000
Emitter cutoff current I
EBO
(pA)
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–190
Typical Value
I
C
= –1 mA
–180
–170
–10
25
–1.0
–25
–160
–150
–0.1
0
–2
–4
–6
–8
–10
Emitter to Base Voltage V
EB
(V)
–140
10
100
1k
10 k
100 k
Base to Emitter Resistance R
BE
(Ω)
5
HITACHI [ HITACHI SEMICONDUCTOR ]
