2SA1190, 2SA1191
Collector Cutoff Current vs.
Collector to Base Voltage
Collector Cutoff Current vs.
Collector to Emitter Voltage
–10.000
–1,000
–100
–10
–1,000
–100
–10
RBE = ∞
IE = 0
Ta = 75°C
Ta = 75°C
25
25
–25
–25
–1.0
–1
–0.1
0
–20
–40
–60
–80
–100
0
–20
–40
–60
–80
–100
Collector to Base Voltage VCB (V)
Collector to Emitter Voltage VCE (V)
Emitter Cutoff Current vs.
Emitter to Base Voltage
Collector to Emitter Breakdown Voltage vs.
Base to Emitter Resistance
–1,000
–100
–10
–190
–180
–170
–160
–150
–140
Typical Value
IC = 0
I
C = –1 mA
Ta = 75°C
25
–1.0
–25
–0.1
0
–2
–4
–6
–8
–10
10
100
1 k
10 k
100 k
Emitter to Base Voltage VEB (V)
Base to Emitter Resistance RBE (Ω)
5
HITACHI [ HITACHI SEMICONDUCTOR ]
