2SA1190, 2SA1191
Electrical Characteristics (Ta = 25°C)
2SA1190
2SA1191
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
–90
–90
–5
—
—
—
—
—
—
–120
–120
–5
—
—
—
—
—
—
V
V
V
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current trnsfer ratio hFE*1
—
—
—
—
–0.1
–0.1
800
—
—
—
—
–0.1 µA
–0.1 µA
800
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
—
—
250
250
VCE = –12 V,
IC = –2 mA*2
Collector to emitter
saturation voltage
VCE(sat)
VBE(sat)
—
—
—
—
—
–0.05 –0.15 —
–0.05 –0.15 V
–0.7 –1.0 V
IC = –10 mA,
IB = –1 mA*2
Base to emitter
saturation voltage
–0.7 –1.0
—
—
—
—
Gain bandwidth product fT
130
3.2
—
—
130
3.2
—
—
MHz VCE = –6 V,
IC = –10 mA
Collector output
capacitance
Cob
NF
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
0.15 1.5
0.15 1.5
dB
VCE = –6 V,
IC = –0.1 mA,
Rg = 10 kΩ
f = 1 kHz
—
—
0.2
0.7
2.0
—
—
—
0.2
0.7
2.0
—
dB
VCE = –6 V,
IC = –0.1 mA,
Rg = 10 kΩ
f = 10 Hz
Noise voltage reffered en
to input
nV/
VCB = –6 V,
√Hz IC = –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.
2. Pulse test
D
E
250 to 500
400 to 800
3
HITACHI [ HITACHI SEMICONDUCTOR ]
