GD100HFU120C1S
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching
Loss
Turn-Off Switching
Loss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SC Data
Stray inductance
Module lead
resistance, terminal to
chip
T
C
=25℃
V
CE
=25V, f=1MHz,
V
GE
=0V
T
P
≤10μs,
V
GE
=15V,
T
j
=125℃, V
CC
=900V,
V
CEM
≤1200V
V
CC
=600V,I
C
=100A,
R
G
=4.7Ω, V
GE
=±15V,
T
j
=125℃
V
CC
=600V,I
C
=100A,
R
G
=4.7Ω, V
GE
=±15V,
T
j
=25℃
45
1.8
4.2
72
36
362
48
1.6
2.5
IGBT Module
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
9.53
0.83
0.19
I
SC
L
CE
R
CC’+EE’
470
30
0.75
A
nH
mΩ
Electrical Characteristics of DIODE
T
C
=25℃ unless otherwise noted
Symbol
V
FM
t
rr
Parameter
Diode Forward
Voltage
Diode Reverse
Recovery Time
Diode Peak
Reverse Recovery
Current
Reverse Recovery
Charge
Test Conditions
I
F
=100A
T
j
=25℃
T
j
=125℃
T
j
=25℃
I
F
=100A,
V
R
=600V,
di/dt=-3600A/μs
,V
GE
=0V
T
j
=125℃
T
j
=25℃
T
j
=125℃
T
j
=25℃
T
j
=125℃
Min.
Typ.
2.0
2.2
10
16
90
120
3.5
6.0
A
Max.
2.5
2.5
Units
V
μC
I
rr
E
rec
mJ
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
0.05
160
3/8
Typ.
Max.
0.17
0.36
Units
℃/W
℃/W
℃/W
g
Rev.B
HB [ HB ELECTRONIC COMPONENTS ]
