GD100HFU120C1S
Symbol
V
GES
I
C
I
CM(1)
I
F
I
FM
P
D
T
SC
T
j
T
STG
I
2
t-value, Diode
V
ISO
Mounting Torque
Description
Gate-Emitter Voltage
Collector Current
@ T
C
=25℃, T
j
=150℃
@ T
C
=80℃, T
j
=150℃
@ T
C
=80℃
IGBT Module
GD100HFU120C1S
±20V
145
100
200
100
200
357
10
-40 to +150
-40 to +125
1250
2500
2.5 to 5
3 to 6
Units
V
A
A
A
A
W
μs
℃
℃
A
2
s
V
N.m
N.m
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum power Dissipation @ T
j
=150℃
Short Circuit Withstand Time @ T
j
=125℃
Operating Junction Temperature
Storage Temperature Range
V
R
=0V, t=10ms, T
j
=125℃
Isolation Voltage RMS, f=50Hz, t=1min
Power Terminal Screw:M5
Mounting Screw:M6
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Electrical Characteristics of IGBT
Tc=25℃ unless otherwise noted
Off Characteristics
Symbol
BV
CES
I
CES
I
GES
Parameter
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Gate-Emitter Leakage
Current
Test Conditions
T
j
=25℃
V
CE
=V
CES
,V
GE
=0V,
T
j
=25℃
V
GE
=V
GES
,V
CE
=0V,
T
j
=25℃
Min.
1200
2
400
Typ.
Max.
Units
V
mA
nA
On Characteristics
Symbol
V
GE(th)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
I
C
=4mA,V
CE
=V
GE
,
T
j
=25℃
I
C
=100A,V
GE
=15V,
T
j
=25℃
I
C
=100A,V
GE
=15V,
T
j
=125℃
Min.
4.4
Typ.
5.0
3.46
3.52
Max.
6.0
3.7
V
Units
V
V
CE(sat)
Switching Characteristics
Symbol
t
d(on)
t
r
t
d(off)
Parameter
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Test Conditions
V
CC
=600V,I
C
=100A,
R
G
=4.7Ω, V
GE
=±15V,
T
j
=25℃
Min.
Typ.
70
32
350
2/8
Max.
Units
ns
ns
ns
Rev.B
HB [ HB ELECTRONIC COMPONENTS ]
