HANBit
HMS12832M4
H A N
SRAM MODULE 512KByte (128K x 32-Bit)
B I T
HMS12832M4
Part No.
GENERAL DESCRIPTION
The HMS12832M4 is a high-speed static random access memory (SRAM) module containing 131,072 words
organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-
sided, FR4-printed circuit board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
PIN ASSIGNMENT
FEATURES
Vss
PD0
PD1
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Vcc
1
/ CE4 33
/ CE3 34
NC 35
2
3
Access times : 12, 15 and 20ns
High-density 512KByte design
High-reliability, high-speed design
Single + 5V ±0.5V power supply
Easy memory expansion with /CE and /OE functions
All inputs and outputs are TTL-compatible
Industry-standard pinout
4
A16 36
5
/ OE 37
Vss 38
6
7
DQ24 39
DQ16 40
DQ25 41
DQ17 42
DQ26 43
DQ18 44
DQ27 45
DQ19 46
A3 47
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A0
A7
FR4-PCB design
A1
A8
A10 48
A2
A4 49
OPTIONS
MARKING
A9
A11 50
DQ12
DQ4
DQ13
DQ5
DQ14
DQ6
DQ15
DQ7
Vss
A5 51
A12 52
Timing
Vcc 53
8ns access
10ns access
12ns access
15ns access
20ns access
Packages
- 8
-10
-12
-15
-20
A13 54
A6 55
DQ20 56
DQ28 57
DQ21 58
DQ29 59
DQ22 60
DQ30 61
DQ23 62
DQ31 63
Vss 64
/ WE
A15
A14
64-pin SIMM
M
/ CE2
/ CE1
SIMM
TOP VIEW
PD0 = Open
PD1 = Open
1
HANBit Electronics Co.,Ltd.