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HMS12832M4G 参数 Datasheet PDF下载

HMS12832M4G图片预览
型号: HMS12832M4G
PDF下载: 下载PDF文件 查看货源
内容描述: SRAM模块512K字节( 128K ×32位) , 64引脚SIMM / ZIP [SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 123 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HMS12832M4G/Z4  
NOTES(WRITE CYCLE)  
1. ll write cycle timing is referenced from the last valid address to the first transition address.  
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE  
going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the  
beginning of write to the end of write.  
3. tCW is measured from the later of CS going low to end of write.  
4. tAS is measured from the address valid to the beginning of write.  
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going  
high.  
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of  
opposite phase of the output must not be applied because bus contention can occur.  
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and  
write cycle.  
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.  
9. Dout is the read data of the new address.  
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should  
not be applied.  
FUNCTIONAL DESCRIPTION  
/CE  
/WE  
X*  
H
/OE  
X
MODE  
Not Select  
Output Disable  
Read  
I/O PIN  
High-Z  
High-Z  
DOUT  
SUPPLY CURRENT  
H
l SB, l SB1  
lCC  
L
H
L
H
L
lCC  
L
L
X
Write  
DIN  
lCC  
Note: X means Don't Care  
URL: www.hbe.co.kr  
8
HANBit ElectronicsCo.,Ltd.  
Rev. 1.0 (September / 2002)  
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