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HMN1288D-150I 参数 Datasheet PDF下载

HMN1288D-150I图片预览
型号: HMN1288D-150I
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块为1Mbit ( 128K ×8位) , 32引脚DIP, 5V [Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 172 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HMN1288D  
Non-Volatile SRAM MODULE 1Mbit (128K x 8-Bit), 32Pin-DIP, 5V  
Part No. HMN1288D  
GENERAL DESCRIPTION  
The HMN1288D Nonvolatile SRAM is a 1,048,576-bit static RAM organized as 131,072 bytes by 8 bits.  
The HMN1288D has a self-contained lithium energy source provide reliable non-volatility coupled with the unlimited write  
cycles of standard SRAM and integral control circuitry, which constantly monitors the single 5V, supply for an out-of-  
tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the  
memory until after VCC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the  
SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is  
switched on to sustain the memory until after VCC returns valid.  
The HMN1288D uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide non-  
volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.  
FEATURES  
w Access time : 70, 85, 120, 150 ns  
PIN ASSIGNMENT  
w High-density design : 1Mbit Design  
w Battery internally isolated until power is applied  
1
2
3
4
32  
31  
30  
29  
NC  
A16  
A14  
A12  
VCC  
A15  
NC  
/WE  
A13  
A8  
A9  
A11  
/OE  
A10  
/CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
w Industry-standard 32-pin 128K x 8 pinout  
w Unlimited write cycles  
w Data retention in the absence of VCC  
w 10-years minimum data retention in absence of power  
w Automatic write-protection during power-up/power-down  
cycles  
5
6
7
8
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A7  
A6  
A5  
A4  
A3  
A2  
9
w Data is automatically protected during power loss  
w Conventional SRAM operation; unlimited write cycles  
10  
11  
12  
13  
14  
15  
16  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
OPTIONS  
w Timing  
70 ns  
MARKING  
32-pin Encapsulated Package  
- 70  
- 85  
-120  
-150  
85 ns  
120 ns  
150 ns  
URL : www.hbe.co.kr  
Rev. 1.0 (June, 2002)  
1
HANBit Electronics Co.,Ltd