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HMF1M32F2VSA-90 参数 Datasheet PDF下载

HMF1M32F2VSA-90图片预览
型号: HMF1M32F2VSA-90
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存ROM模块4MByte ( 1Mx32Bit ) , 80Pin - SMM , 3.3V设计 [Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design]
分类和应用: 闪存
文件页数/大小: 11 页 / 283 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第1页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第2页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第3页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第4页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第6页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第7页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第8页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第9页  
HANBit  
HMF1M32F2VSA  
AC CHARACTERISTICS  
Read Only Operations Characteristics  
u
SPEED  
-100  
PARAMETER  
DESCRIPTION  
UNIT  
- 90  
-120  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
tRC  
tACC  
tCE  
Read Cycle Time  
90  
100  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access time  
90  
90  
35  
30  
100  
100  
40  
120  
120  
50  
Chip Enable to Access time  
Output Enable time  
tOE  
tDF  
Chip Enable to Output High-Z  
30  
30  
tOEH  
tQH  
Output Enable Hold Time  
Output Hold Time From Addresses,  
/CE or /OE  
0
0
0
0
0
0
u
Erase/Program Operations  
Alternate /WE Controlled Writes  
- 90  
-100  
-120  
PARAMETER  
DESCRIPTION  
MIN  
90  
0
MAX  
MIN  
100  
0
MAX  
MIN  
120  
0
MAX  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tWC  
tAS  
Write Cycle Time (1)  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
Address Hold Time  
45  
45  
0
45  
45  
0
50  
50  
0
tAH  
tDS  
Data Setup Time  
tDH  
Data Hold Time  
0
0
0
tOES  
tGHWL  
tCS  
Output Enable Setup Time  
Read Recover Time Before Write  
/CE Setup Time  
0
0
0
0
0
0
0
0
0
tCH  
/CE Hold Time  
tWP  
Write Pulse Width  
45  
30  
-
-
45  
30  
-
-
50  
30  
-
-
tWPH  
tPGM  
tBERS  
tVCS  
tRB  
Write Pulse Width High  
Programming Operation  
Block Erase Operation (2)  
Vcc set up time  
11  
11  
11  
0.7  
50  
-
-
0.7  
50  
-
-
0.7  
50  
-
-
0
-
-
-
-
-
0
-
-
-
-
-
0
-
-
-
-
-
Write Recover Time Before RY_/BY  
/RESRT High Before Read  
/RESRT to Power Down Time  
/RESRT Pulse Width  
/RESRT Setup Time  
50  
50  
50  
tRH  
20  
20  
20  
tRPD  
tRP  
500  
500  
500  
500  
500  
500  
tRSTS  
Notes  
: : 1. Not 100% tested  
2 . The duration of the program or erase operation varies and is calculated in the internal algorithms.  
5
URL : www.hbe.co.kr  
REV.02(August, 2002)  
HANBit Electronics Co., Ltd.  
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