欢迎访问ic37.com |
会员登录 免费注册
发布采购

HMF1M32F2VSA-90 参数 Datasheet PDF下载

HMF1M32F2VSA-90图片预览
型号: HMF1M32F2VSA-90
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存ROM模块4MByte ( 1Mx32Bit ) , 80Pin - SMM , 3.3V设计 [Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design]
分类和应用: 闪存
文件页数/大小: 11 页 / 283 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第1页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第2页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第3页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第5页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第6页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第7页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第8页浏览型号HMF1M32F2VSA-90的Datasheet PDF文件第9页  
HANBit  
HMF1M32F2VSA  
ERASE AND PROGRAMMING PERFORMANCE  
LIMITS  
PARAMETER  
UNIT  
COMMENTS  
MIN.  
TYP.  
0.7  
27  
MAX.  
Block Erase Time  
-
15  
sec  
sec  
ms  
Excludes 00H programming  
prior to erasure  
Chip Erase Time  
Word Programming Time  
Chip Programming Time  
-
-
11  
330  
36  
Excludes system-level  
overhead  
12  
sec  
TSOP CAPACITANCE  
PARAMETER  
SYMBOL  
PARAMETER  
DESCRIPTION  
TEST SETUP  
MIN  
MAX  
UNIT  
CIN  
COUT  
CIN2  
Input Capacitance  
VIN = 0  
VOUT = 0  
VIN = 0  
-
-
-
10  
10  
10  
pF  
pF  
pF  
Output Capacitance  
Control Pin Capacitance  
Notes  
: Capacitance is periodically sampled and not 100% tested.  
TEST SPECIFICATIONS  
TEST CONDITION  
VALUE  
UNIT  
Output load  
1TTL gate  
Input rise and full times  
5
0 to 3  
1.5  
ns  
V
Input pulse levels  
Input timing measurement reference levels  
Output timing measurement reference levels  
V
1.5  
V
5.0V  
2.7k  
W
IN3064  
or Equivalent  
Device  
Under  
Test  
CL  
6.2k  
W
Diodes = IN3064  
or Equivalent  
Note : CL = 100pF including jig capacitance  
4
URL : www.hbe.co.kr  
REV.02(August, 2002)  
HANBit Electronics Co., Ltd.