GaAsP photodiode
s
Short
circuit current linearity
10
0
Diffusion type
(Typ. Ta=25 ˚C, A light source fully illuminated)
10
-2
R
L
=100
Ω
OUTPUT CURRENT (A)
10
-4
10
-6
10
10
10
10
10
-8
-10
-12
-14
Refer to NEP value in characteristic table.
-16
10
-16
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
s
Dimensional
outlines (unit: mm)
➀
G5645
WINDOW
3.0 ± 0.2
5.4 ± 0.2
3.55 ± 0.2
➁
G5842, G6262
(3.4)
ACTIVE AREA
(3 ×) 0.5
4.7 ± 0.1
3.2
(FILTER)
2.54
4.0
2.4
1.25 ± 0.25
4.0
6.5 ± 0.2
1.25 ± 0.25
0.45
LEAD
14
4.0
0.1
-
0.1
+
0.2
0.65
0.85
PHOTOSENSITIVE
SURFACE
2.54 ± 0.2
3.2
(FILTER)
N/C
CATHODE
ANODE
4.0
CONNECTED
TO CASE
Borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.
KGPDA0012EA
KGPDA0004EA
0.2
1.5
4.0
HAMAMATSU [ HAMAMATSU CORPORATION ]
