GaAsP photodiode
s
Spectral
response
0.5
(Typ. Ta=25 ˚C)
0.1
Diffusion type
(Typ. Ta=25 ˚C)
PHOTO SENSITIVITY (A/W)
G5645
0.3
G7189
G6262
0.2
PHOTO SENSITIVITY (A/W)
0.4
0.08
G5842
0.06
0.04
0.1
0.02
0
200
400
600
800
0
200
300
400
500
WAVELENGTH (nm)
KGPDB0029EA
WAVELENGTH (nm)
KGPDB0001EC
s
Photo
sensitivity temperature characteristic
(Typ.)
+3.0
s
Rise
time vs. load resistance
10
ms
(Typ. Ta=25 ˚C, V
R
=0 V)
TEMPERATURE COEFFICIENT
(%/˚C)
+2.5
1
ms
+2.0
RISE TIME
+1.5
+1.0
+0.5
100
µs
10
µs
1
µs
0
-0.5
200
100
ns
2
10
400
600
800
10
3
10
4
10
5
10
6
WAVELENGTH
(nm)
KGPDB0030EA
LOAD RESISTANCE (Ω)
KGPDB0031EA
s
Dark
current vs. reverse voltage
100
pA
(Typ. Ta=25 ˚C, V
R
=0 V)
s
Shunt
resistance vs. ambient temperature
(Typ. V
R
=10 mV)
10 TΩ
1 TΩ
10
pA
SHUNT RESISTANCE
0.01
0.1
1
10
DARK CURRENT
100 GΩ
10 GΩ
1
pA
1 GΩ
100 MΩ
100
fA
0.001
10 MΩ
-20
0
20
40
60
80
REVERSE VOLTAGE (V)
KGPDB0032EA
AMBIENT TEMPERATURE (˚C)
KGPDB0033EA
HAMAMATSU [ HAMAMATSU CORPORATION ]
