ISSUED DATE :2006/03/28
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
-30
-
-0.02
-
-
V
BVDSS
Tj
VGS=0, ID=-250uA
Ϧ
BVDSS
/Ϧ
-
-
V/к
V
Reference to 25к, ID=-1mA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4.0A
VGS= ±20V
-1.0
-3.0
VGS(th)
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-1
VDS=-30V, VGS=0
VDS=-24V, VGS=0
VGS=-10V, ID=-4.0A
VGS=-4.5V, ID=-3.0A
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-25
-
80
Static Drain-Source On-Resistance2
mꢁ
RDS(ON)
-
120
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
5.5
1
8.8
Qg
Qgs
Qgd
Td(on)
Tr
ID=-4.0A
nC
-
VDS=-24V
VGS=-4.5V
2.6
7
-
-
V
DS=-15V
ID=-1A
GS=-10V
6
-
ns
V
Turn-off Delay Time
Fall Time
18
4
-
Td(off)
Tf
RG=3.3ꢁ
RD=15ꢁ
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
400
90
30
640
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
-1.2
VSD
IS=-1.6A, VGS=0V
Reverse Recovery Time2
Trr
-
-
21
14
-
-
ns
IS=-4.0A, VGS=0V
dI/dt=100A/ꢂs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156к/W when mounted on Min. copper pad.
GTT2605
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