Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
-30V
80mꢁ
-4.0A
GTT2605
R
I
D
P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T
Description
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2605 is universally used for all commercial-industrial applications.
Features
*Fast Switching Characteristic
*Lower Gate Charge
*Small Footprint & Low Profile Package
Package Dimensions
Millimeter
Min. Max.
1.10 MAX.
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
REF.
REF.
A
A1
A2
c
L
L1
ꢀ
0
0.70
0.10
1.00
0°
0.30
10°
0.50
0.12 REF.
b
D
E
E1
2.70
2.60
1.40
3.10
3.00
1.80
e
e1
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
-30
Unit
V
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
ID @T
ID @T
A
=25к
=70к
-4
A
A
-3.3
A
IDM
-20
A
Power Dissipation
PD @T
A
=25к
2
W
W/к
к
Linear Derating Factor
Operating Junction and Storage Temperature Range
0.016
-55 ~ +150
Tj, Tstg
Thermal Data
Parameter
Symbol
Rthj-a
Value
62.5
Unit
к/W
Thermal Resistance Junction-ambient3 Max.
GTT2605
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GTM [ GTM CORPORATION ]
