ISSUED DATE :2005/11/03
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
25
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
0.037
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=7A
3.0
VGS(th)
gfs
Forward Transconductance
14
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
VGS= ±20V
-
-
1
25
25
35
-
VDS=25V, VGS=0
VDS=20V, VGS=0
VGS=10V, ID=7A
VGS=4.5V, ID=5.2A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
-
Static Drain-Source On-Resistance2
mꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
10.5
1.9
7.5
8
Qg
Qgs
Qgd
Td(on)
Tr
ID=7A
nC
-
-
VDS=15V
VGS=4.5V
-
-
-
-
V
DS=15V
ID=1A
GS=10V
-
9.5
25
13.5
395
260
105
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=6ꢀ
RD=15ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.2
Unit
V
Test Conditions
-
-
-
VSD
IS=2.1A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode
)
-
1.67
A
IS
VD=VG=0V, VS=1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135к/W when mounted on Min. copper pad.
GSS4920
Page: 2/5
GTM [ GTM CORPORATION ]
