Pb Free Plating Product
ISSUED DATE :2005/11/03
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
25V
25mꢀ
7A
GSS4920
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4920 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
6.20
5.00
4.00
8°
Min.
Max.
0.25
0.49
1.75
5.80
4.80
3.80
0°
0.10
0.35
1.35
A
B
C
D
E
F
M
H
L
J
K
G
0.375 REF.
0.40
0.19
0.90
0.25
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
VGS
25
V
V
Gate-Source Voltage
±20
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
ID @T
ID @T
A
=25к
=70к
7
5.7
A
A
A
IDM
20
A
Total Power Dissipation
PD @T
A
=25к
2
W
W/к
к
Linear Derating Factor
0.016
-55 ~ +150
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-amb
62.5
к/W
GSS4920
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GTM [ GTM CORPORATION ]
