ISSUED DATE :2005/09/14
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance2
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
20
-
0.03
-
-
V
BVDSS
Tj
VGS(th)
gfs
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
V/к
V
-
0.7
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=5V, ID=3A
1.5
10
-
-
S
̈́100
-
nA
uA
uA
IGSS
VGS= ̈́16V
-
-
1
25
38
50
10
-
VDS=20V, VGS=0
VDS=16V, VGS=0
VGS=10V, ID=4A
VGS=4.5V, ID=4A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
-
Static Drain-Source On-Resistance2
mӨ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
6
Qg
Qgs
Qgd
Td(on)
Tr
ID=4A
VDS=16V
VGS=4.5V
nc
-
1
-
2
-
-
8
-
V
DS=10V
ID=1A
GS=5V
-
9
-
ns
V
Turn-off Delay Time
Fall Time
-
13
3
-
Td(off)
Tf
RG=3.3Ө
RD=10Ө
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
360
80
65
570
-
Ciss
Coss
Crss
VGS=0V
VDS=20V
f=1.0MHz
pF
-
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
1.3
VSD
IS=1A, VGS=0V
Reverse Recovery Time2
Trr
-
-
18
10
-
-
ns
IS=4A, VGS=0V
dI/dt=100A/ꢀs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on FR4 board, t Љ10sec.
GM9452
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GTM [ GTM CORPORATION ]
