Pb Free Plating Product
ISSUED DATE :2005/09/14
REVISED DATE :
GM9452
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
50m
4A
Description
The GM9452 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
*Simple Drive Requirement
*Low Gate Charge
*Capable of 2.5V Gate Drive
Features
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@4.5V
Continuous Drain Current
3
, V
GS
@4.5V
Pulsed Drain Current
1
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
20
f 16
4
2.5
12
1.25
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
100
Unit
/W
GM9452
Page: 1/4
GTM [ GTM CORPORATION ]
