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GL159 参数 Datasheet PDF下载

GL159图片预览
型号: GL159
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅平面高电流晶体管 [PNP SILICON PLANAR HIGH CURRENT TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 2 页 / 326 K
品牌: GTM [ GTM CORPORATION ]
 浏览型号GL159的Datasheet PDF文件第1页  
CORPORATION
Cob
t
on
t
off
-
-
-
74
82
350
-
-
-
pF
ns
2%
ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
V
CB
=-10V, I
E
=0, f=1MHz
V
CC
=-10V, I
C
=-2A, I
B1
=I
B2
=-200mA
*Measured under pulse condition. Pulse width
300 s, Duty Cycle
Characteristics Curve
Spice parameter data is available upon request for this device.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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