CORPORATION
GL159
Description
ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
The GL159 is designed for general purpose switching and amplifier applications.
Features
&
Amps continuous current, up to 15Amps peak current
5
Package Dimensions
&Excellent gain characteristic specified up to 10Amps
&Very low saturation voltages
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
10 C
0C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
C
13 T YP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
Ratings
+150
-55~+150
-100
-60
-6
-5
-15
3
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
CE(sat)
3
*V
CE(sat)
4
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
Min.
-100
-60
-6
-
-
-
-
-
-
-
-
-
100
100
75
10
-
Typ.
-
-
-
-
-
-
-20
-85
-155
-370
-1.08
-0.935
200
200
90
25
120
,unless otherwise stated)
Max.
Unit
Test Conditions
-
V
I
C
=-100uA , I
E
=0
-
V
I
C
=-10mA, I
B
=0
-
V
I
E
=-100uA ,I
C
=0
-50
nA
V
CB
=-80V, I
E
=0
-50
nA
V
CES
=-60V
-10
nA
V
EB
=-6V, I
C
=0
-50
mV
I
C
=-100mA, I
B
=-10mA
-140
mV
I
C
=-1A, I
B
=-100mA
-210
mV
I
C
=-2A, I
B
=-200mA
-460
mV
I
C
=-5A, I
B
=-500mA
-1.24
V
I
C
=-5A, I
B
=-500mA
-1.07
V
V
CE
=-1V, I
C
=-5A
V
CE
=-1V, I
C
=-10mA
300
V
CE
=-1V, I
C
=-2A
V
CE
=-1V, I
C
=-5A
V
CE
=-1V, I
C
=-10A
-
MHz
V
CE
=-10V, I
C
=-100mA, f=50MHz
1/2
GTM [ GTM CORPORATION ]
