ISSUED DATE :2006/12/01
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Min.
60
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
34
-
-
-
-
114
33
18
21
39
70
24
7000
400
87
Max.
-
4.0
-
±100
1
5
12
-
-
-
-
-
-
-
-
-
-
Unit
V
V
S
nA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=40A
V
GS
= ±25V
V
DS
=60, V
GS
=0
V
DS
=48V, V
GS
=0
V
GS
=10V, I
D
=37.5A
I
D
=30A
V
DS
=30V
V
GS
=10V
V
DS
=30V
V
GS
=10V
R
G
=3
R
L
=1
V
GS
=0V
V
DS
=30V
f=1.0MHz
Static Drain-Source On-Resistance
3
Total Gate Charge
3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
3
Reverse Recovery Time
3
Symbol
V
SD
T
rr
Q
rr
I
S
Min.
-
-
-
-
Typ.
-
53
143
-
Max.
1.5
-
-
75
Unit
V
ns
nC
A
Test Conditions
I
S
=75A, V
GS
=0V, Tj=25 :
I
S
=30A, V
GS
=0V
dI/dt=100A/ s
V
D
= V
G
=0V, V
S
=1.5V
Reverse Recovery Charge
Continuous Source Current (
Body Diode
)
Notes: 1. Pulse width limited by safe operating area.
2. Starting Tj=25 : , V
DD
=20V, L=0.1mH, R
G
=25 , I
AS
=20A.
3. Pulse width 300us, duty cycle 2%.
GE75NF60
Page: 2/4
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