Pb Free Plating Product
ISSUED DATE :2006/12/01
REVISED DATE :
GE75NF60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
12m
75A
The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The through-hole version (TO-220) is available for low-profile applications and suited for low voltage
applications such as DC/DC converters.
Description
Features
*High Density Cell Design for Ultra Low On-Resistance
*High power and Current handing capability
Package Dimensions
REF.
A
b
c
D
E
L4
L5
Millimeter
Min.
Max.
4.40
4.80
0.76
1.00
0.36
0.50
8.60
9.00
9.80
10.4
14.7
15.3
6.20
6.60
REF.
c1
b1
L
e
L1
Ø
A1
Millimeter
Min.
Max.
1.25
1.45
1.17
1.47
13.25
14.25
2.54 REF.
2.60
2.89
3.71
3.96
2.60
2.80
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
C
=25 :
I
D
@T
C
=100 :
I
DM
P
D
@T
C
=25 :
E
AS
I
AS
Tj, Tstg
Ratings
60
±25
75
56
200
268
1.78
350
38
-55 ~ +175
Unit
V
V
A
A
A
W
W/ :
mJ
A
:
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
0.56
60
Unit
:
/W
: /W
GE75NF60
Page: 1/4
GTM [ GTM CORPORATION ]
