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GS882ZV36BB-300I 参数 Datasheet PDF下载

GS882ZV36BB-300I图片预览
型号: GS882ZV36BB-300I
PDF下载: 下载PDF文件 查看货源
内容描述: 9MB流水线和流量通过同步NBT SRAM [9Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 33 页 / 885 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS882ZV18/36BB/D-333/300/250/200  
GS882ZV18/36B BGA Pin Description  
Symbol  
A0, A1  
A
Type  
Description  
I
I
Address field LSBs and Address Counter Preset Inputs  
Address Inputs  
DQA  
DQB  
DQC  
DQD  
I/O  
Data Input and Output pins  
BA, BB, BC, BD  
I
I
Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low  
No Connect  
NC  
CK  
CKE  
W
Clock Input Signal; active high  
Clock Enable; active low  
I
I
Write Enable; active low  
E1  
I
Chip Enable; active low  
E3  
I
Chip Enable; active low  
E2  
I
Chip Enable; active high  
G
I
Output Enable; active low  
ADV  
ZZ  
I
Burst address counter advance enable; active high  
Sleep mode control; active high  
Flow Through or Pipeline mode; active low  
Linear Burst Order mode; active low  
9th Bit Enable; active low (119-bump BGA only)  
I
FT  
I
LBO  
PE  
I
I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low  
Drive])  
ZQ  
I
I
I
Scan Test Mode Select  
Scan Test Data In  
TMS  
TDI  
O
I
Scan Test Data Out  
Scan Test Clock  
TDO  
TCK  
MCH  
DNU  
I
Must Connect High  
Do Not Use  
V
Core power supply  
I/O and Core Ground  
Output driver power supply  
DD  
V
I
SS  
V
I
DDQ  
Rev: 1.03 3/2005  
6/33  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.