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GS882ZV36BB-300I 参数 Datasheet PDF下载

GS882ZV36BB-300I图片预览
型号: GS882ZV36BB-300I
PDF下载: 下载PDF文件 查看货源
内容描述: 9MB流水线和流量通过同步NBT SRAM [9Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 33 页 / 885 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS882ZV18/36BB/D-333/300/250/200  
Absolute Maximum Ratings  
(All voltages reference to V  
)
SS  
Symbol  
Description  
Value  
Unit  
V
V
Voltage on V Pins  
0.5 to 3.6  
DD  
DD  
V
Voltage in V  
Pins  
DDQ  
0.5 to 3.6  
V
DDQ  
V
0.5 to V  
+0.5 (3.6 V max.)  
DDQ  
Voltage on I/O Pins  
Voltage on Other Input Pins  
Input Current on Any Pin  
Output Current on Any I/O Pin  
Package Power Dissipation  
Storage Temperature  
V
I/O  
V
0.5 to V +0.5 (3.6 V max.)  
V
IN  
DD  
I
+/20  
+/20  
mA  
mA  
W
IN  
I
OUT  
P
1.5  
D
o
T
55 to 125  
55 to 125  
C
STG  
o
T
Temperature Under Bias  
C
BIAS  
Note:  
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended  
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of  
this component.  
Power Supply Voltage Ranges  
Parameter  
Symbol  
Min.  
1.6  
Typ.  
1.8  
Max.  
2.0  
Unit  
V
Notes  
V
1.8 V Supply Voltage  
DD  
1.8 V V  
I/O Supply Voltage  
V
1.6  
1.8  
2.0  
V
DDQ  
DDQ  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 3.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
Recommended Operating Temperatures  
Parameter  
Symbol  
Min.  
0
Typ.  
25  
Max.  
70  
Unit  
°C  
Notes  
T
Ambient Temperature (Commercial Range Versions)  
2
2
A
T
Ambient Temperature (Industrial Range Versions)  
40  
25  
85  
°C  
A
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-  
tions quoted are evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
DDn  
Rev: 1.03 3/2005  
14/33  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.  
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