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GS88018AT-225 参数 Datasheet PDF下载

GS88018AT-225图片预览
型号: GS88018AT-225
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×18 , 256K ×32 , 256K ×36 9MB同步突发静态存储器 [512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 26 页 / 734 K
品牌: GSI [ GSI TECHNOLOGY ]
 浏览型号GS88018AT-225的Datasheet PDF文件第8页浏览型号GS88018AT-225的Datasheet PDF文件第9页浏览型号GS88018AT-225的Datasheet PDF文件第10页浏览型号GS88018AT-225的Datasheet PDF文件第11页浏览型号GS88018AT-225的Datasheet PDF文件第13页浏览型号GS88018AT-225的Datasheet PDF文件第14页浏览型号GS88018AT-225的Datasheet PDF文件第15页浏览型号GS88018AT-225的Datasheet PDF文件第16页  
GS88018/32/36AT-250/225/200/166/150/133  
Power Supply Voltage Ranges  
Parameter  
Symbol  
Min.  
3.0  
Typ.  
3.3  
Max.  
3.6  
Unit  
Notes  
V
3.3 V Supply Voltage  
2.5 V Supply Voltage  
V
V
V
V
DD3  
V
2.3  
2.5  
2.7  
DD2  
3.3 V V  
2.5 V V  
I/O Supply Voltage  
I/O Supply Voltage  
V
3.0  
3.3  
3.6  
DDQ  
DDQ  
DDQ3  
V
2.3  
2.5  
2.7  
DDQ2  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are  
evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
V
Range Logic Levels  
Parameter  
DDQ3  
Symbol  
Min.  
2.0  
Typ.  
Max.  
Unit  
Notes  
V
Input High Voltage  
V
V
+ 0.3  
DD  
V
V
V
V
1
DD  
IH  
V
Input Low Voltage  
V
0.3  
2.0  
0.8  
+ 0.3  
1
DD  
IL  
V
I/O Input High Voltage  
I/O Input Low Voltage  
V
V
1,3  
1,3  
DDQ  
IHQ  
DDQ  
V
V
0.3  
0.8  
DDQ  
ILQ  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are  
evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.  
V
Range Logic Levels  
Parameter  
DDQ2  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Notes  
V
Input High Voltage  
V
0.6*V  
V
+ 0.3  
DD  
V
V
V
V
1
DD  
IH  
DD  
V
Input Low Voltage  
V
0.3*V  
DD  
0.3  
1
DD  
IL  
V
I/O Input High Voltage  
I/O Input Low Voltage  
V
0.6*V  
V
+ 0.3  
DDQ  
1,3  
1,3  
DDQ  
IHQ  
DD  
V
V
0.3*V  
DD  
0.3  
DDQ  
ILQ  
Notes:  
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are  
evaluated for worst case in the temperature range marked on the device.  
2. Input Under/overshoot voltage must be 2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.  
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.  
Rev: 1.02 9/2002  
12/26  
© 2001, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.