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GS8162Z18B-225 参数 Datasheet PDF下载

GS8162Z18B-225图片预览
型号: GS8162Z18B-225
PDF下载: 下载PDF文件 查看货源
内容描述: 18MB流水线和流量通过同步NBT SRAM [18Mb Pipelined and Flow Through Synchronous NBT SRAM]
分类和应用: 静态存储器
文件页数/大小: 38 页 / 1200 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)  
Undershoot Measurement and Timing  
Overshoot Measurement and Timing  
V
IH  
50% tKC  
V
+ 2.0 V  
50%  
DD  
V
SS  
50%  
V
DD  
V
2.0 V  
SS  
50% tKC  
V
IL  
Capacitance  
o
(T = 25 C, f = 1 MHZ, V = 2.5 V)  
A
DD  
Parameter  
Symbol  
Test conditions  
Typ.  
Max.  
Unit  
pF  
C
V
= 0 V  
Input Capacitance  
4
6
5
7
IN  
IN  
C
V
OUT  
= 0 V  
Input/Output Capacitance  
pF  
I/O  
Note:  
These parameters are sample tested.  
AC Test Conditions  
Parameter  
Conditions  
V
– 0.2 V  
Input high level  
Input low level  
DD  
0.2 V  
1 V/ns  
/2  
Input slew rate  
V
Input reference level  
DD  
V
/2  
Output reference level  
Output load  
DDQ  
Fig. 1  
Notes:  
1. Include scope and jig capacitance.  
2. Test conditions as specified with output loading as shown in Fig. 1  
unless otherwise noted.  
3. Device is deselected as defined by the Truth Table.  
Output Load 1  
DQ  
*
50Ω  
30pF  
V
DDQ/2  
* Distributed Test Jig Capacitance  
Rev: 2.21 11/2004  
18/38  
© 1999, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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