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GS816036BGT-250IV 参数 Datasheet PDF下载

GS816036BGT-250IV图片预览
型号: GS816036BGT-250IV
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 984 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary  
GS8160xxBT-xxxV  
TQFP Pin Description  
Symbol  
A0, A1  
A
Type  
Description  
I
I
Address field LSBs and Address Counter preset Inputs  
Address Inputs  
DQA  
DQB  
DQC  
DQD  
I/O  
Data Input and Output pins  
NC  
No Connect  
Byte WriteWrites all enabled bytes; active low  
Byte Write Enable for DQA, DQB Data I/Os; active low  
Clock Input Signal; active high  
BW  
I
I
I
I
I
I
I
I
I
I
I
I
I
BA, BB, BC, BD  
CK  
GW  
Global Write EnableWrites all bytes; active low  
Chip Enable; active low  
E1, E3  
E2  
Chip Enable; active high  
G
ADV  
Output Enable; active low  
Burst address counter advance enable; active low  
Address Strobe (Processor, Cache Controller); active low  
Sleep Mode control; active high  
ADSP, ADSC  
ZZ  
FT  
Flow Through or Pipeline mode; active low  
Linear Burst Order mode; active low  
Core power supply  
LBO  
V
DD  
V
I
I
I/O and Core Ground  
SS  
V
Output driver power supply  
DDQ  
Rev: 1.01 5/2006  
5/23  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.