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GS74104TP-10IT 参数 Datasheet PDF下载

GS74104TP-10IT图片预览
型号: GS74104TP-10IT
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX4, 10ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 410 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS74104TP/J
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Max
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Input Leakage
Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
LO
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z
V
OUT
= 0 to V
DD
I
OH
= –4mA
I
LO
= +4mA
Min
– 1 uA
–1 uA
2.4
Max
1 uA
1 uA
0.4 V
Rev: 1.07 1/2001
4/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.